last known position : Retraité
was at CEMHTI from to 04/09/2008
as Directeur de Recherche
Directeur du CERI jusqu'en 2008
Research Team Web pages...
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Publication list (not only @CEMHTI)
104 ACL
,
9 ACLN
,
1 OV
/
Group by
>=1
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ACL
doi
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J.L.Bridot, D.Dayde, C.Riviere, C.Mandon, C.Billotey, S.Lerondel, R.Sabattier, G.Cartron, A.Le Pape, G.Blondiaux, M.Janier, P.Perriat, S.Roux, O.Tillement
"Hybrid gadolinium oxide nanoparticles combining imaging and therapy"
Journal of Materials Chemistry
19
2328-2335
[2009]
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ACL
doi
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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide"
Journal of Nuclear Materials
362
202-207
[2007]
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ACLN
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G.Blondiaux, W.Esselinckx, J.P.Devogelaer, Y.Boutsen
"Osteoporosis assessment and treatment after hip or forearm fracture: a Belgian experience"
Osteoporosis International
18
S59-S60
[2007]
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ACL
doi
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H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, C.Corbel, G.Blondiaux, J.P.Piron
"Thermal evolution of the vacancy defects distribution in 1 MeV helium implanted sintered UO2"
Nuclear Instruments and Methods in Physics Research Section B
261
883-887
[2007]
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ACLN
doi
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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance"
Silicon Carbide and Related Materials 2005, Pts 1 and 2 - Materials Science Forum (ed. R.P.Devaty)
527-529
571-574
[2006]
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ACL
doi
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T.Suzuki, A.Abdelouas, B.Grambow, T.Mennecart, G.Blondiaux
"Oxidation and dissolution rates of UO2(s) in carbonate-rich solutions under external alpha irradiation and initially reducing conditions"
Radiochimica Acta
94
567-573
[2006]
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ACL
doi
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H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, G.Blondiaux, C.Corbel, J.P.Piron
"Vacancy defects induced in sintered polished UO2 disks by helium implantation"
Applied Surface Science
252
3256-3261
[2006]
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ACL
doi
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H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, G.Blondiaux, C.Corbel, J.P.Piron
"Thermal evolution of vacancy defects induced in sintered UO2 disks by helium implantation"
Applied Surface Science
252
3262-3268
[2006]
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ACL
doi
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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, E.Balanzat
"Vacancy defects induced in the track region of 132 MeV C-12 irradiated SiC"
Nuclear Instruments and Methods in Physics Research Section B
250
259-262
[2006]
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ACLN
doi
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M.F.Barthe, L.Henry, S.Arpiainen, G.Blondiaux
"Electron irradiation induced vacancy defects detected by positron annihilation in 6H-SiC"
Silicon Carbide and Related Materials 2004 - Materials Science Forum (ed. R.Nipoti, A.Poggi, A.Scorzoni)
483
473-476
[2005]
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