CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation
UPR3079 CNRS

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  Gilbert Blondiaux
Directeur de Recherche CNRS

Retraité
was at CEMHTI from to 04/09/2008 as 'Directeur du CERI'

Research Group Web pages...
CEMHTI Web Pages...

87 ACL , 13 ACLN , 1 OV / Group by  
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ACL
doi  
J.L.Bridot, D.Dayde, C.Riviere, C.Mandon, C.Billotey, S.Lerondel, R.Sabattier, G.Cartron, A.Le Pape, G.Blondiaux, M.Janier, P.Perriat, S.Roux, O.Tillement
"Hybrid gadolinium oxide nanoparticles combining imaging and therapy"
Journal of Materials Chemistry 19 2328-2335 2009
ACL
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide"
Journal of Nuclear Materials 362 202-207 2007
ACLN
 
G.Blondiaux, W.Esselinckx, J.P.Devogelaer, Y.Boutsen
"Osteoporosis assessment and treatment after hip or forearm fracture: a Belgian experience"
Osteoporosis International 18 S59-S60 2007
ACL
doi  
H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, C.Corbel, G.Blondiaux, J.P.Piron
"Thermal evolution of the vacancy defects distribution in 1 MeV helium implanted sintered UO2"
Nuclear Instruments and Methods in Physics Research Section B 261 883-887 2007
ACLN
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance"
Silicon Carbide and Related Materials 2005, Pts 1 and 2 - Materials Science Forum (ed. R.P.Devaty) 527-529 571-574 2006
ACL
doi  
T.Suzuki, A.Abdelouas, B.Grambow, T.Mennecart, G.Blondiaux
"Oxidation and dissolution rates of UO2(s) in carbonate-rich solutions under external alpha irradiation and initially reducing conditions"
Radiochimica Acta 94 567-573 2006
ACL
doi  
H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, G.Blondiaux, C.Corbel, J.P.Piron
"Vacancy defects induced in sintered polished UO2 disks by helium implantation"
Applied Surface Science 252 3256-3261 2006
ACL
doi  
H.Labrim, M.F.Barthe, P.Desgardin, T.Sauvage, G.Blondiaux, C.Corbel, J.P.Piron
"Thermal evolution of vacancy defects induced in sintered UO2 disks by helium implantation"
Applied Surface Science 252 3262-3268 2006
ACL
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, E.Balanzat
"Vacancy defects induced in the track region of 132 MeV C-12 irradiated SiC"
Nuclear Instruments and Methods in Physics Research Section B 250 259-262 2006
ACLN
 
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by positron annihilation spectroscopy and electron paramagnetic resonance"
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | Materials Science Forum (ed. R.P.Devaty) 527-529 571-574 2006
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