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2016
ACL
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H.Palancher, R.Kachnaoui, G.Martin, A.Richard, J.C.Richaud, C.Onofri, R.Belin, A.Boulle, H.Rouquette, C.Sabathier, G.Carlot, P.Desgardin, T.Sauvage, F.Rieutord, J.Raynal, Ph.Goudeau, A.Ambard, 'Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study', J. Nucl. Mater. 476 63-76 (2016) doi:10.1016/j.jnucmat.2016.04.023
Within the frame of the long-term evolution of spent nuclear fuel in dry disposal, the behavior of He in
UO2 polycrystals has to be studied. Here, strain relaxation in He implanted samples has been characterized
using in situ X-ray diffraction during thermal annealing. The influence of a wide range of
experimental parameters (annealing atmosphere, He ion energy, orientation of the UO2 grains probed by
X-rays) has been evaluated. If each of them contributes to the strain relaxation kinetics in the implanted
layer, strain relaxation is not completed for temperatures below 900 C which is equivalent to what has
been found on He implanted UO2 single crystals, or aged UO2 pellets doped with a-emitters. In the case
of implantation with 500 keV He ions, we clearly show that strain relaxation and He release are not
correlated for temperatures below 750 C.
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