Conditions Extrêmes et Matériaux : Haute Température et Irradiation
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2012

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G.Guimbretière, L.Desgranges, A.Canizarès, G.Carlot, R.Caraballo, C.Jégou, F.Duval, N.Raimboux, M.R.Ammar, P.Simon, 'Determination of in-depth damaged profile by Raman line scan in a pre-cut He2+ irradiated UO2', Appl. Phys. Lett. 100 251914 (2012) doi:10.1063/1.4729588

Raman measurements were carried out to probe the spectroscopic signatures of the ion beam irradiation-induced damage and their in-depth profiles on an Ura-nium dioxide sample previously cut and polished prior to performing a 25 MeV He2+ cyclotron beam irradiation. Raman spectra clearly show the creation of three defects bands (U1 ≈ 530, U2 ≈ 575 and U3 ≈ 635 cm-1) resulting from the ion irradiation and also some changes in the T2g peak of UO2. Their in-depth dis-tribution inside the sample exhibits a clear increase of the damage from the sur-face up to the position of the implanted He.