Conditions Extrêmes et Matériaux : Haute Température et Irradiation
CEMHTI - UPR3079 CNRS
utilisateur non identifié |
Login
Home
Directory
Publications
Research
Facilities
Jobs - News
Access
Past members
CERAM - M.Allix
DEFIR - P.Desgardin
MatRMag - V.Montouillout
NAFMAT - C.Ania
OR2T - O.Rozenbaum
Common Actions
High-Temperatures Facility
Particles Beams Facilities
Vibr. Spectroscopies and Planex
NMR Facility
Softwares
National and European Facilities
all the instruments
Pelletron
Positons
Performances
IBA Techniques
Implantation and Irradiation
IR-RMN in Infranalytics
PANACEA Eu
850 MHz
Diffusion
NMR
dmfit NMR
focus (IR Optics)
Levitation
Electron Microscope
XRay and Neutrons
NMR
IR emission
RAMAN
Accelerators
RAMAN in situ
RAMAN high temp.
RAMAN imaging
News@CEMHTI
Jobs@CEMHTI
Seminars@CEMHTI
View CEMHTI Publication
Return to publication search...
Ask for a reprint
email :
I am not a bot ;-)
1998
ACL
doi
F.Vivet, A.Bouchoule, L.Boufendi
,
'Synthesis and characterization of SiC : H ultrafine powder generated in an argon-silane-methane low-pressure radio-frequency discharge'
, J. Appl. Phys. 83 7474-7481 (1998) doi:
10.1063/1.367510
The peculiarity of dusty plasma reactors offers a convenient way to obtain processed particles at submicronic levels, with successive layers of different materials grown by using pulsed gas flows, and different plasma chemistries in succession. This concept is applied to the synthesis of silicon carbide (SIC) particles. In this paper two significant situations are reported showing that particles can be synthesized with different properties by varying the process parameters (gas-flow handling, radio-frequency power level). These properties include broad or narrow size dispersion, almost crystalline or amorphous structure, and widely varying Si/C stoichiometry. Monosized particles with high specific surfaces have been obtained by a two-step growth process by using limited radio-frequency power.