CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

Skip Navigation LinksHome > Facilities > High-Temperatures Facility > RAMAN > RAMAN imaging

RAMAN imagery

Disorder and Optical Properties
patrick.simon@cnrs-orleans.fr  Patrick Simon   [+33](0)238 25 55 21

See our list of publications


this very versatile high resolution spectrometer, with its excellent spectral stability, allows accurate surface and volume cartography on sample at room temperature and at high temperature (up to 1300 K). Multivariate statistical analysis is a powerful tool for cartography analysis (composed of a huge number of individual spectra, up to a million)

The InVia Reflex set-up

The sample can be excited thanks to one of the 5 wavelength delivered by three lasers :

  • Ar/Kr : 457,9; 488 and 514,5 nm

  • He-Ne : 633 nm

  • Laser Diode : 785 nm

Resolution can be fitted to the sample studied thanks to a set of 5 gratings

  • 600 lines/mm, one blazed in Ar/Kr region, the other one in red/IR region

  • 1200 lines/mm blazed in red/IR region

  • 1800 lines/mm

  • 2400 lines/mm blazed in Ar/Kr region

the sample analyzed size will be determined by the microscope objective power. We can choose between :

  • 5x Leica objective, NA=0,12 / WD=14mm / LR=1,5µm / AR=140µm

  • 20x Leica objective, NA=0,40 / WD=1,15mm / LR=0,8µm / AR=12,5 µm

  • 50x Leica objective, NA=0,75 / WD=0,37mm / LR=5,1µm / AR=3,6µm

  • 100x Leica objective, NA=0,85 / WD=0,33mm / LR=0,7µm / AR=2,8µm

  • 50x Olympus objective, NA=0,28 / WD=10mm

NA stands for numerical aperture,WD for working distance; AR for axial resolution and LR for lateral one

page créée et maintenue par Aurélien Canizarès