2002
ACLN
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M.F.Barthe, P.Desgardin, L.Henry, C.Corbel, D.T.Britton, G.Kogel, P.Sperr, W.Triftshauser, P.Vicente, L.diCioccio, 'Vacancy defects in as-polished and in high-fluence H(+)-implanted 6H-SiC detected by slow positron annihilation spectroscopy', Silicon Carbide and Related Materials 2001, Pts 1 and 2, Proceedings - Materials Science Forum (ed. S.Yoshida, S.Nishino, H.Harima, T.Kimoto) 389-3 493-496 (2002) doi:10.4028/www.scientific.net/msf.389-393.493
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