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1998
ACL
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O.PAGES, M.SOLTANI, A.ZAOUI, M.CERTIER, J.P.LAURENTI, T.CLOÎTRE, R.L.AULOMBARD, D.BORMANN, B.KHELIFA, 'A Raman study of coupled plasmon-LO phonon modes at ZnSe/GaAs interfaces', J. Cryst. Growth 185 188-192 (1998) doi:10.1016/s0022-0248(98)80319-9
Raman scattering is used to investigate p-type accumulation zones on the substrate side of ZnSe—GaAs heterostructures. The intensity imbalance between (i) the near-interfacial phonon-plasmon coupled mode located below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumination. Competition between electric field-induced scattering and more trivial scattering volume effects is discussed
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