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2003
ACL
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S.Morlens, L.Ortega, B.Rousseau, S.Phok, J.L.Deschanvre, P.Chaudouet, P.Odier, 'Use of cerium ethylhexanoate solutions for preparation of CeO2 buffer layers by spin coating', Mater. Sci. Eng. B 104 185-191 (2003) doi:10.1016/s0921-5107(03)00194-6
CeO2 films formation is studied on single crystals and (1 0 0) oriented nickel substrates (Ni RABiTs) via the metal organic deposition technique. Ce(III) 2-ethylhexanoate: Ce(EH)3, in solution in toluene is used as chemical precursor. Homogeneous films are easily deposited by spin coating and their crystallisation performed at 800–900 ◦C leads to bi-axial texturation on MgO, STO and Ni RABiTs with the (2 0 0) planes parallel to the surface. In the case of Ni RABiTs, the degree of disorientation is directly linked to that of the template substrate. For Ni substrates, the conditions implemented avoid the oxidation of the Ni but allow the formation of the cerium oxide. These films are good candidates to be buffer layers in the architecture of coated conductors for high Tc superconducting cables applications.
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