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2008
ACL
doi
L.Bizo, M.Allix, H.Niu, M.J.Rosseinsky
,
'Magnetism and Phase Formation in the Candidate Dilute Magnetic Semiconductor System In2-xCrxO3: Bulk Materials are Dilute Paramagnets'
, Adv. Funct. Mater. 18 777 (2008) doi:
10.1002/adfm.200700672
Well-characterized bulk materials in the candidate dilute magnetic semiconductor system In2-xCrxO3 are prepared for 0 x <0.15, with cation site preferences in the bixbyite structure identified by diffraction methods. Small ferromagnetic moments are observed; their size (<10-2 mB/dopant ion) is not consistent with bulk ferromagnetism. The resulting bulk materials display dilute paramagnetic behaviour, with all of the moment expected per Cr3+ cation dopant being involved in this paramagnetic response.