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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite, 'Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance', Silicon Carbide and Related Materials 2005, Pts 1 and 2 - Materials Science Forum (ed. R.P.Devaty), 527-529 571-574 (2006) doi:10.4028/www.scientific.net/msf.527-529.571 - 3 citations (WoS)
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M.F.Barthe, L.Henry, S.Arpiainen, G.Blondiaux, 'Electron irradiation induced vacancy defects detected by positron annihilation in 6H-SiC', Silicon Carbide and Related Materials 2004 - Materials Science Forum (ed. R.Nipoti, A.Poggi, A.Scorzoni), 483 473-476 (2005) doi:10.4028/www.scientific.net/msf.483-485.473 - 2 citations (WoS)
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X.Kerbiriou, A.Gredde, M.F.Barthe, P.Desgardin, G.Blondiaux, 'Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy', Silicon Carbide and Related Materials 2003, Prts 1 and 2 - Materials Science Forum (ed. R.Madar, J.Camassel), 457-460 825-828 (2004) doi:10.4028/www.scientific.net/msf.457-460.825 - 3 citations (WoS)
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A.Declemy, A.Shiryaev, S.Stepanov, J.F.Barbot, M.F.Beaufort, E.Oliviero, E.Ntsoenzok, T.Sauvage, 'Contribution of X-Ray Diffraction simulations to experimental study of high energy He implantation at high dose in 4H-SiC at room temperature', Silicon Carbide and Related Materials 2003, Prts 1 and 2 - Materials Science Forum (ed. R.Madar, J.Camassel), 457-460 937-940 (2004) doi:10.4028/www.scientific.net/msf.457-460.937 - 1 citations (WoS)
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Rapport
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H.Touati, F.Fayon, 'Caractérisation structurale de phosphates cristallins et vitreux, par RMN haute résolution solide', Rapport DEA, (2004)
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M.F.Barthe, P.Desgardin, L.Henry, C.Corbel, D.T.Britton, G.Kogel, P.Sperr, W.Triftshauser, P.Vicente, L.diCioccio, 'Vacancy defects in as-polished and in high-fluence H(+)-implanted 6H-SiC detected by slow positron annihilation spectroscopy', Silicon Carbide and Related Materials 2001, Pts 1 and 2, Proceedings - Materials Science Forum (ed. S.Yoshida, S.Nishino, H.Harima, T.Kimoto), 389-3 493-496 (2002) doi:10.4028/www.scientific.net/msf.389-393.493 - 3 citations (WoS)
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