Publication list (not only @CEMHTI)
4 ACL
,
1 ACLN
,
1 These
/
Group by
>=1
ACL
doi
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J.Wiktor, X.Kerbiriou, G.Jomard, S.Esnouf, M.F.Barthe, M.Bertolus
"Positron annihilation spectroscopy investigation of vacancy clusters in silicon carbide: Combining experiments and electronic structure calculations"
Physical Review B
89
155203
[2014]
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ACL
doi
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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide"
Journal of Nuclear Materials
362
202-207
[2007]
|
ACL
doi
|
X.Kerbiriou, M.F.Barthe, A.Gentils, P.Desgardin
"Thermal evolution of vacancy defects induced in 12 MeV H+ irradiated 6H-SiC single crystals"
Physica Status Solidi C
4
3650-3653
[2007]
|
ACLN
doi
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X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance"
Silicon Carbide and Related Materials 2005, Pts 1 and 2 - Materials Science Forum (ed. R.P.Devaty)
527-529
571-574
[2006]
|
These
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X.Kerbiriou
"Propriétés des défauts ponctuels natifs et induits par irradiation dans les polytypes 3C et 6H du carbure de silicium déterminées par annihilation de positons et RPE"
These
Université d'Orléans
24 Fév.
[2006]
|
ACL
doi
|
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, E.Balanzat
"Vacancy defects induced in the track region of 132 MeV C-12 irradiated SiC"
Nuclear Instruments and Methods in Physics Research Section B
250
259-262
[2006]
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