Conditions Extrêmes et Matériaux : Haute Température et Irradiation
CEMHTI - UPR3079 CNRS

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  Xavier Kerbiriou
last known position :
was at CEMHTI from 01/11/2002 to 01/02/2006
as Thèse - PhD
Research Group Web pages...
CEMHTI Web Pages...

Publication list (not only @CEMHTI)

4 ACL , 2 ACLN , 1 These / Group by  
ACL
doi HAL 
J.Wiktor, X.Kerbiriou, G.Jomard, S.Esnouf, M.F.Barthe, M.Bertolus
"Positron annihilation spectroscopy investigation of vacancy clusters in silicon carbide: Combining experiments and electronic structure calculations"
Physical Review B 89 155203 2014
ACL
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide"
Journal of Nuclear Materials 362 202-207 2007
ACL
doi  
X.Kerbiriou, M.F.Barthe, A.Gentils, P.Desgardin
"Thermal evolution of vacancy defects induced in 12 MeV H+ irradiated 6H-SiC single crystals"
Physica Status Solidi C 4 3650-3653 2007
ACLN
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, G.Petite
"Vacancy defects induced by low energy electron irradiation in 6H and 3C-SiC monocrystals characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance"
Silicon Carbide and Related Materials 2005, Pts 1 and 2 - Materials Science Forum (ed. R.P.Devaty) 527-529 571-574 2006
These
HAL 
X.Kerbiriou
"Propriétés des défauts ponctuels natifs et induits par irradiation dans les polytypes 3C et 6H du carbure de silicium déterminées par annihilation de positons et RPE"
These Université d'Orléans 24 Fév. 2006
ACL
doi  
X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, E.Balanzat
"Vacancy defects induced in the track region of 132 MeV C-12 irradiated SiC"
Nuclear Instruments and Methods in Physics Research Section B 250 259-262 2006
ACLN
doi  
X.Kerbiriou, A.Gredde, M.F.Barthe, P.Desgardin, G.Blondiaux
"Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy"
Silicon Carbide and Related Materials 2003, Prts 1 and 2 - Materials Science Forum (ed. R.Madar, J.Camassel) 457-460 825-828 2004