Conditions Extrêmes et Matériaux : Haute Température et Irradiation

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M.Alemany, A.Chabli, E.Oudot, F.Pierre, P.Desgardin, F.Bertin, M.Gros-Jean, M.F.Barthe, 'Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact', J. Phys. Conf. Ser. 791 012019 (2017) doi:10.1088/1742-6596/791/1/012019

In this work, we report on the PAS characterization of sintered HfO2 bulk ceramic and HfO2 layers deposited with various methods on a silicon substrate with a layer thickness ranging from 25 to 100 nm. PAS measurements are sensitive to the deposition process type and the post-deposition annealing. Chemical and structural characterisations have been performed on the same samples. The PAS results are discussed regarding to the material defects of the different layers. In addition, a built-in electrical field induced by charged defects located at the HfO2/Si interface as well as in the HfO2 layer must be taken into account in the PAS data fitting. Both non-contact internal electrical field measurements and internal electrical field simulations support the PAS finding.