Conditions Extrêmes et Matériaux : Haute Température et Irradiation
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2005

ACL
doi

H.Assaf, E.Ntsoenzok, M.O.Ruault, O.Kaitasov, 'Novel low-k dielectric obtained by Xenon implantation in SiO2', Gettering and Defect Engineering in Semiconductor Technology Xi - Solid State Phenomena (ed. B.Pichaud, A.Claverie, D.Alquier, H.Richter, M.Kittler) 108-109 291-296 (2005) doi:10.4028/www.scientific.net/ssp.108-109.291