Conditions Extrêmes et Matériaux : Haute Température et Irradiation
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2025

ACL
doi

Sylvain Lemettre, Charlotte Kutyla, Clément Bessouet, Laetitia Leroy, Alain Bosseboeuf, Thierry Sauvage, Olivier Wendling, Aurélien Bellamy, Stéphanie Escoubas, Christophe Guichet, Olivier Thomas, Johan Moulin, 'Thermal activation of co-evaporated Ti, Zr and V-based binary and ternary getter alloy thin films: characterization by electrical measurements during hydrogenation', Vacuum 239 114354 (2025) doi:10.1016/j.vacuum.2025.114354

Ti, Zr, V, Zr-Ti, Zr-V, Ti-V and Ti-Zr-V alloy thin films were co-evaporated under UHV. Their composition was characterized by Rutherford Backscattering Spectrometry while their microstructure was characterized directly by X-ray diffraction and scanning electronic microscopy, and indirectly by electrical measurements. Depending on their composition, films are polycrystalline or amorphous and have a resistivity ranging from 60 to 160 μΩ cm. Amorphous films exhibit resistivities higher than 150 μΩ cm and negative TCRs, in accordance with Mooij rule. No bulk oxidation in ambient air was detected by electrical measurements over a period as long as 2 years. After deposition, films were activated during a thermal annealing at 5 °C/min up to 400 °C under 10−7 mbar vacuum or 10−3 mbar of H2. An in situ sheet resistance monitoring of the films during annealing allowed to detect their hydrogenation and thus to compare their activation temperatures. Films with amorphous microstructure (ZrV, TiZrV) have lower activation temperatures than single element films and nanocrystalline ZrTi and TiV films. TiZrV has the lowest activation temperature, while single metal films have the highest activation temperatures.