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2007
ACL
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M.F.Barthe, H.Labrim, A.Gentils, P.Desgardin, C.Corbel, S.Esnouf, J.P.Piron, 'Positron annihilation chatacteristics in UO2: for lattice and vacancy defects induced by electron irradiations', Physica Status Solidi C 4 3627-3632 (2007) doi:10.1002/pssc.200675752
In this work both 22Na based positron lifetime spectroscopy (PALS) and slow positron beam based Doppler annihilation-ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk and the first micron under the surface of sintered UO2 disks that have been polished and annealed at high temperature (1700 °C/24 h/ArH2). Results show the presence of negative ions that are tentatively identified to negatively charged oxygen atoms located in interstitial sites. The positron annihilation characteristics in the UO2 lattice have been determined and are equal to SL(UO2) = 0.371(5), WL(UO2) = 0.078(7), L(UO2) = 169 ± 1 ps. Such disks have been irradiated at room temperature with electrons and particles at different fluences. After irradiation SPBDB and PALS measurements show the formation of U-related vacancy defects after a 2.5 MeV electrons irradiation whereas no defects are detected for an irradiation at 1 MeV.
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