2008
ACL
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A.Gentils, M.F.Barthe, L.Thomé, M.Behar, 'Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions', Appl. Surf. Sci. 255 78-80 (2008) doi:10.1016/j.apsusc.2008.05.166
In this paper the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5 to 25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence.
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