Conditions Extrêmes et Matériaux : Haute Température et Irradiation
CEMHTI - UPR3079 CNRS

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2010

ACL
doi

A.Debelle, P.E.Lhuillier, M.F.Barthe, T.Sauvage, P.Desgardin, 'Helium desorption in 3He implanted tungsten at low fluence and low energy', Nucl. Instr. Meth. Phys. Res. B 268 223-226 (2010) doi:10.1016/j.nimb.2009.10.176

The behaviour of helium in polycrystalline 3He implanted tungsten at low energy (60 keV) and low fluence (2 × 1013 cm−2) has been studied as a function of post-implantation annealing temperature until 1873 K by means of Nuclear Reaction Analysis. Helium desorption has been observed only from 1500 K, suggesting a helium trapping at mono-vacancies. Only 75% of the implanted helium has been released after the annealing during 1 h at high temperature (1873 K); besides, the desorption rate decreased from 1673 K. The presence of a second type of helium trapping site is likely to explain this strong helium retention