Conditions Extrêmes et Matériaux : Haute Température et Irradiation
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2012
ACL
doi
F.Linez, A.Canizarès, A.Gentils, G.Guimbretière, P.Simon, M.F.Barthe
,
'Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy'
, J. Raman Spectrosc. 43 939-944 (2012) doi:
10.1002/jrs.3118