Conditions Extrêmes et Matériaux : Haute Température et Irradiation
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2012

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H.J.von Bardeleben, J.L.Cantin, U.Gerstmann, A.Scholle, S.Greulich-Weber, E.Rauls, M.Landmann, W.G.Schmidt, A.Gentils, J.Botsoa, M.F.Barthe, 'Identification of the Nitrogen Split Interstitial (N-N)N in GaN', Phys. Rev. Lett. 109 206402 (2012) doi:10.1103/physrevlett.109.206402

Combining electron paramagnetic resonance(EPR), density functional theory(DFT), and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated interstitial is unstable and transforms into a split interstitial configuration (N-N)N. It is generated by particle irradiation with an introduction rate of a primary defect, pins the Fermi-level at EC-1.0 eV for high fluences, and anneals out at 400 ◦C. The associated defect, the nitrogen vacancy, is observed by PAS only in the initial stage of irradiation.