Conditions Extrêmes et Matériaux : Haute Température et Irradiation
CEMHTI - UPR3079 CNRS

utilisateur non identifié  |   Login

  Hanan Assaf


last known position :
was at CEMHTI from 01/10/2003 to 01/09/2006
as Thèse - PhD

Research Team Web pages...

Publication list (not only @CEMHTI)

4 ACL , 6 ACLN , 1 Brevet , 1 These / Group by  
12
ACL
doi  
H.Assaf, E.Ntsoenzok, E.Leoni, M.F.Barthe, M.O.Ruault, O.Kaitasov, S.Ashok
"Nanocavity generation in SiO2 by Kr and Xe ion implantation"
Electrochemical and Solid State Letters 10 G72-G75 [2007]
ACLN
doi  
H.Assaf, E.Ntsoenzok, M.F.Barthe, E.Leoni, M.O.Ruault, S.Ashok
"Anomalous Evolution of Bubbles in Krypton-Implanted SiO2"
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II | Materials Research Society Symposium Proceedings (ed. S.Ashok, J.Chevallier, P.Kiesel, T.Ogino) 994 125-130 [2007]
Brevet
 
E.Ntsoenzok, H.Assaf, M.O.Ruault
"Method of Producing a Silicon Oxide-Based Material with a Low Dielectric Constant"
Brevet BILKO INPI 05 50253 FORT WASHINGTON, PA US .... [2006]
ACLN
 
E.Ntsoenzok, H.Assaf, M.O.Ruault, S.Ashok
"Xe implantation in SiO/sub 2/: low-k applications"
Solid-State and Integrated Circuit Technology Issue 295 - 297 [2006]
ACL
doi  

H.Assaf, E.Ntsoenzok, M.F.Barthe, M.O.Ruault, T.Sauvage, S.Ashok
"Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide"
Nuclear Instruments and Methods in Physics Research Section B 253 222-226 [2006]
ACLN
doi  
H.Assaf, E.Ntsoenzok, M.O.Ruault, S.Ashok
"Low-k dielectric obtained by noble gas implantation in silicon oxide"
Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects | Materials Research Society Symposium Proceedings (ed. T.Y.Tsui, Y.C.Joo, L.Michaelson, M.Lane, A.A.Volinsky) 914 439-444 [2006]
These
 
H.Assaf
"Hanan Assaf Etude des nano-bulles induites par l'implantation de gaz rares dans l'oxyde de silicium : applications."
These Université d'Orléans [2006]
ACL
doi  
H.Assaf, E.Ntsoenzok
"Transfer of thin silicon layers by MeV hydrogen implantation"
Nuclear Instruments and Methods in Physics Research Section B 240 183-187 [2005]
ACL
doi  
H.Assaf, E.Ntsoenzok, M.O.Ruault, O.Kaitasov
"Novel low-k dielectric obtained by Xenon implantation in SiO2"
Gettering and Defect Engineering in Semiconductor Technology Xi - Solid State Phenomena (ed. B.Pichaud, A.Claverie, D.Alquier, H.Richter, M.Kittler) 108-109 291-296 [2005]
ACLN
 
E.Ntsoenzok, H.Assaf, S.Ashok
"Blistering and splitting in hydrogen-implanted silicon"
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices | Materials Research Society Symposium Proceedings (ed. S.Ashok, J.Chevallier, B.L.Sopori, M.Tabe, P.Kiesel) 864 405-409 [2005]
12