Conditions Extrêmes et Matériaux : Haute Température et Irradiation
CEMHTI - UPR3079 CNRS

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  Hanan Assaf
last known position :
was at CEMHTI from 01/10/2003 to 01/09/2006
as Thèse - PhD
Research Group Web pages...
CEMHTI Web Pages...

Publication list (not only @CEMHTI)

4 ACL , 6 ACLN , 1 Brevet , 1 These / Group by  
12
ACLN
doi  
H.Assaf, E.Ntsoenzok, M.F.Barthe, E.Leoni, M.O.Ruault, S.Ashok
"Anomalous Evolution of Bubbles in Krypton-Implanted SiO2"
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II | Materials Research Society Symposium Proceedings (ed. S.Ashok, J.Chevallier, P.Kiesel, T.Ogino) 994 125-130 2007
ACL
doi  
H.Assaf, E.Ntsoenzok, E.Leoni, M.F.Barthe, M.O.Ruault, O.Kaitasov, S.Ashok
"Nanocavity generation in SiO2 by Kr and Xe ion implantation"
Electrochemical and Solid-State Letters 10 G72-G75 2007
Brevet
 
E.Ntsoenzok, H.Assaf, M.O.Ruault
"Method of Producing a Silicon Oxide-Based Material with a Low Dielectric Constant"
Brevet BILKO INPI 05 50253 FORT WASHINGTON, PA US .... 2006
ACLN
 
E.Ntsoenzok, H.Assaf, M.O.Ruault, S.Ashok
"Xe implantation in SiO/sub 2/: low-k applications"
Solid-State and Integrated Circuit Technology Issue 295 - 297 2006
ACL
doi  
H.Assaf, E.Ntsoenzok, M.F.Barthe, M.O.Ruault, T.Sauvage, S.Ashok
"Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide"
Nuclear Instruments and Methods in Physics Research Section B 253 222-226 2006
ACLN
doi  
H.Assaf, E.Ntsoenzok, M.O.Ruault, S.Ashok
"Low-k dielectric obtained by noble gas implantation in silicon oxide"
Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects | Materials Research Society Symposium Proceedings (ed. T.Y.Tsui, Y.C.Joo, L.Michaelson, M.Lane, A.A.Volinsky) 914 439-444 2006
These
 
H.Assaf
"Hanan Assaf Etude des nano-bulles induites par l'implantation de gaz rares dans l'oxyde de silicium : applications."
These Université d'Orléans 2006
ACL
doi  
H.Assaf, E.Ntsoenzok
"Transfer of thin silicon layers by MeV hydrogen implantation"
Nuclear Instruments and Methods in Physics Research Section B 240 183-187 2005
ACL
doi  
H.Assaf, E.Ntsoenzok, M.O.Ruault, O.Kaitasov
"Novel low-k dielectric obtained by Xenon implantation in SiO2"
Gettering and Defect Engineering in Semiconductor Technology Xi - Solid State Phenomena (ed. B.Pichaud, A.Claverie, D.Alquier, H.Richter, M.Kittler) 108-109 291-296 2005
ACLN
 
E.Ntsoenzok, H.Assaf, S.Ashok
"Blistering and splitting in hydrogen-implanted silicon"
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices | Materials Research Society Symposium Proceedings (ed. S.Ashok, J.Chevallier, B.L.Sopori, M.Tabe, P.Kiesel) 864 405-409 2005
12