Publication list (not only @CEMHTI)
10 ACL
,
1 ACLN
/
Group by
|
ACL
doi
|
H.J.von Bardeleben, J.L.Cantin, U.Gerstmann, A.Scholle, S.Greulich-Weber, E.Rauls, M.Landmann, W.G.Schmidt, A.Gentils, J.Botsoa, M.F.Barthe
"Identification of the Nitrogen Split Interstitial (N-N)N in GaN"
Physical Review Letters
109
206402
[2012]
|
ACL
doi
|
F.Linez, A.Canizarès, A.Gentils, G.Guimbretière, P.Simon, M.F.Barthe
"Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy"
Journal of Raman Spectroscopy
43
939-944
[2012]
|
ACL
doi
|
A.Gentils, F.Linez, A.Canizarès, P.Simon, L.Thomé, M.F.Barthe
"Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals"
Journal of Materials Science
46
6390-6395
[2011]
|
ACL
doi
|
G.Herranz, O.Copie, A.Gentils, E.Tafra, M.Basletic, F.Fortuna, K.Bouzehouane, S.Fusil, E.Jacquet, C.Carretero, M.Bibes, A.Hamzic, A.Barthelemy
"Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces"
Journal of Applied Physics
107
103704
[2010]
|
ACL
doi
|
A.Gentils, O.Copie, G.Herranz, F.Fortuna, M.Bibes, K.Bouzehouane, E.Jacquet, C.Carrétéro, M.Basletić, E.Tafra, A.Hamzić, A.Barthélémy
"Point defect distribution in high-mobility conductive SrTiO3 crystals"
Physical Review B
81
144109
[2010]
|
ACLN
doi
|
A.Gentils, M.F.Barthe, W.Egger, P.Sperr
"Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals"
AIP Conference Proceedings
1099
891-895
[2009]
|
ACL
doi
|
A.Gentils, M.F.Barthe, L.Thomé, M.Behar
"Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions"
Applied Surface Science
255
78-80
[2008]
|
ACL
doi
|
D.McGrouther, S.McVitie, J.N.Chapman, A.Gentils
"Controlled domain wall injection into ferromagnetic nanowires from an optimized pad geometry"
Applied Physics Letters
91
3
[2007]
|
ACL
doi
|
M.F.Barthe, H.Labrim, A.Gentils, P.Desgardin, C.Corbel, S.Esnouf, J.P.Piron
"Positron annihilation chatacteristics in UO2: for lattice and vacancy defects induced by electron irradiations"
Physica Status Solidi C
4
3627-3632
[2007]
|
ACL
doi
|
X.Kerbiriou, M.F.Barthe, A.Gentils, P.Desgardin
"Thermal evolution of vacancy defects induced in 12 MeV H+ irradiated 6H-SiC single crystals"
Physica Status Solidi C
4
3650-3653
[2007]
|
|
|